DocumentCode :
2555629
Title :
The effect of annealing temperature on the electrical and optical properties of nanostructured ZNO for UV sensing applications
Author :
Sahdan, Mohd Zainizan ; Kamaruddin, S.A. ; Mamat, M.H. ; Khusaimi, Z. ; Noor, U.M. ; Saim, Hashim ; Ahmed, A.Z. ; Abdullah, S. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam
fYear :
2008
fDate :
25-27 Nov. 2008
Firstpage :
571
Lastpage :
575
Abstract :
Zinc Oxide (ZnO) is a promising candidate for UV sensing applications because of its direct bandgap energy of 3.37 eV and very sensitive to UV light. In this work, we present the effect of annealing temperature on the electrical and optical properties of nanostructured ZnO for UV sensing applications. The SEM results indicate that the surface morphologies of nanostructured ZnO varies with annealing temperatures. The electrical and optical properties are strongly correlated to the shape and size of the nanostructured ZnO. Nanostructured ZnO has fast UV photoresponse with cut-off wavelength ~400 nm. Annealing at 500degC has resulted highest UV absorption and photocurrent response compare to other annealing temperatures. This indicates that annealing temperature has strong effect to the electrical and optical properties of nanostructured ZnO.
Keywords :
II-VI semiconductors; annealing; nanosensors; nanostructured materials; photoconductivity; scanning electron microscopy; surface morphology; thermal analysis; ultraviolet detectors; wide band gap semiconductors; zinc compounds; SEM; UV absorption; UV photoresponse; UV sensing applications; ZnO; annealing temperature effect; electrical property; electron volt energy 3.37 eV; nanostructured zinc oxide; optical property; photocurrent response; surface morphology; temperature 500 C; Annealing; Electromagnetic wave absorption; Optical sensors; Optical surface waves; Photoconductivity; Photonic band gap; Shape; Surface morphology; Temperature sensors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
Type :
conf
DOI :
10.1109/SMELEC.2008.4770390
Filename :
4770390
Link To Document :
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