Electronically tunable Mach-Zehnder polarization splitter

Author

Hu, M.H. ; Huang, J.Z. ; Scarmozzino, R. ; Levy, M. ; Osgood, R.M., Jr.

Author_Institution

Microelectron. Sci. Lab., Columbia Univ., New York, NY, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

230

Abstract

In this paper, we report a new approach to a GaAs-AlGaAs TE/TM beam splitter which permits operation in the III-V materials system. Since III-V semiconductors do not show intrinsic material birefringence, our device is based on the birefringence induced by the electro-optical effect. Specifically, the device utilizes the large difference in propagation constants of the first-higher-order TE mode (TE/sub 01/) and the fundamental TM mode (TM/sub 00/) in the mode-sorting Y-branch.

Keywords

III-V semiconductors; aluminium compounds; birefringence; electro-optical devices; gallium arsenide; optical polarisers; optical receivers; tuning; GaAs-AlGaAs; GaAs-AlGaAs TE/TM beam splitter; III-V materials system; III-V semiconductors; TE/sub 01/; TM/sub 00/; electro-optical effect induced birefringence; electronically tunable Mach-Zehnder polarization splitter; first-higher-order TE mode; fundamental TM mode; intrinsic material birefringence; mode-sorting Y-branch; polarisation diversity receivers; propagation constants; Arm; Electrodes; Etching; Gallium arsenide; III-V semiconductor materials; Optical polarization; Optical receivers; Optical waveguides; Tellurium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571637

Filename

571637