Feasibility study of a novel asymmetric SGOI-TFET using non-local BTBT model

This work presents a novel 30 nm n-channel Silicon Germanium-on-Insulator (SGOI) based Tunnel Field Effect transistor with asymmetric source/drain material using Non-Local Band-to-Band tunneling model, where we have observed the better switching characteristic. This work also shows that the Miller capacitance is very small using Non-Local BTBT model with bandgap lowering. We also observed the effect of position of spacers and overlap/underlap of gate, with source/drain regions using non-local tunneling model. All the simulation is done by Synopsys TCAD where we have observed a high I_on/I_off ratio of 2.290×10⁹ and a steepest average subthreshold swing of 36 mV/decade.