Title :
Growth characterization of InxGa1-xAs/AlxGa1-xAs multi-oxide layer vertical-cavity surface-emitting lasers structure
Author :
Mitani, S.M. ; Alias, M.S. ; Manaf, A.A. ; Yahya, M.R. ; Mat, A.F.A.
Author_Institution :
Optoelectron. Devices Cluster, UPM, Serdang
Abstract :
This paper presents design and characterization of high performance multi-oxide 970 nm InGaAs/AlGaAs MQWs vertical-cavity surface-emitting lasers (VCSELs). Micro-optical components can modify the free-space optical properties of VCSELs for various applications such as illumination purposes, beam profiling in sensing applications and fiber coupling to transceiver modules. However, careful adjustment of material parameters leads to an excellent characterization results. The threshold current, heat flux, strained quantum-well gain, wave intensity at the laser facet and kink-free L-I curve have been obtained in the current design and presented in this communication. The various analyses demonstrate that the multi-oxide layer VCSEL improves the device performance.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; micromirrors; optical multilayers; quantum well lasers; semiconductor growth; surface emitting lasers; InxGa1-xAs-AlxGa1-xAs; beam profiling; fiber coupling; free-space optical properties; heat flux; high performance multi-oxide MQWs; kink-free L-I curve; micro-optical components; multiple quantum wells; threshold current; transceiver modules; vertical-cavity surface-emitting lasers; Fiber lasers; Indium gallium arsenide; Microoptics; Optical design; Optical devices; Optical sensors; Optical surface waves; Quantum well devices; Surface emitting lasers; Vertical cavity surface emitting lasers; InGaAs; Integrated Optoelectronics; Micro-Optics; VCSELs;
Conference_Titel :
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location :
Johor Bahru
Print_ISBN :
978-1-4244-3873-0
Electronic_ISBN :
978-1-4244-2561-7
DOI :
10.1109/SMELEC.2008.4770393