DocumentCode :
255586
Title :
Current measurement and short-circuit protection of an IGBT based on module parasitics
Author :
Oinonen, Markus ; Laitinen, Matti ; Kyyra, J.
Author_Institution :
ABB Oy, Espoo, Finland
fYear :
2014
fDate :
26-28 Aug. 2014
Firstpage :
1
Lastpage :
9
Abstract :
In this paper, a short-circuit protection of an IGBT, based on current measurement is proposed. The IGBT collector current estimate is obtained by filtering the voltage between the auxiliary emitter and the power emitter terminals of an IGBT module. The proposed scheme utilizes a large bandwidth analog circuit which enables to the detect fault current regardless of the current slope. According to the experiments, the proposed circuit can detect faults before desaturation of the IGBT, which is a major benefit compared to the traditional methods based on IGBT saturation voltage measurement.
Keywords :
electric current measurement; insulated gate bipolar transistors; voltage measurement; IGBT collector current estimate; auxiliary emitter; current measurement; module parasitics; power emitter terminals; short circuit protection; voltage measurement; Circuit faults; Current measurement; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Voltage measurement; Current sensor; IGBT; Measurement; Protection device; Short circuit;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
Type :
conf
DOI :
10.1109/EPE.2014.6910824
Filename :
6910824
Link To Document :
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