• DocumentCode
    255586
  • Title

    Current measurement and short-circuit protection of an IGBT based on module parasitics

  • Author

    Oinonen, Markus ; Laitinen, Matti ; Kyyra, J.

  • Author_Institution
    ABB Oy, Espoo, Finland
  • fYear
    2014
  • fDate
    26-28 Aug. 2014
  • Firstpage
    1
  • Lastpage
    9
  • Abstract
    In this paper, a short-circuit protection of an IGBT, based on current measurement is proposed. The IGBT collector current estimate is obtained by filtering the voltage between the auxiliary emitter and the power emitter terminals of an IGBT module. The proposed scheme utilizes a large bandwidth analog circuit which enables to the detect fault current regardless of the current slope. According to the experiments, the proposed circuit can detect faults before desaturation of the IGBT, which is a major benefit compared to the traditional methods based on IGBT saturation voltage measurement.
  • Keywords
    electric current measurement; insulated gate bipolar transistors; voltage measurement; IGBT collector current estimate; auxiliary emitter; current measurement; module parasitics; power emitter terminals; short circuit protection; voltage measurement; Circuit faults; Current measurement; Inductance; Insulated gate bipolar transistors; Logic gates; Multichip modules; Voltage measurement; Current sensor; IGBT; Measurement; Protection device; Short circuit;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
  • Conference_Location
    Lappeenranta
  • Type

    conf

  • DOI
    10.1109/EPE.2014.6910824
  • Filename
    6910824