A new method for the localisation of metallization defects using cathodoluminescence imaging

Author

Liu, X. ; Phang, J.C.H. ; Chan, D.S.H. ; Chim, W.K.

Author_Institution

Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1997

fDate

21-25 Jul 1997

Firstpage

264

Lastpage

269

Abstract

We report a new concept for the localisation of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localisation of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si₃N₄/a-SiO₂ is reported

Keywords

cathodoluminescence; failure analysis; metallisation; passivation; Si; Si₃N₄-SiO₂; Si₃N₄/a-SiO₂ passivation layer; cathodoluminescence imaging; contact metal; contrast; light reflection; metallization defects localisation; silicon device; substrate material; Electrons; Failure analysis; High-resolution imaging; Integrated circuit metallization; Integrated circuit reliability; Optical imaging; Optical reflection; Passivation; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on

Print_ISBN

0-7803-3985-1

Type

conf

DOI

10.1109/IPFA.1997.638343

Filename

638343