Title :
A new method for the localisation of metallization defects using cathodoluminescence imaging
Author :
Liu, X. ; Phang, J.C.H. ; Chan, D.S.H. ; Chim, W.K.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
Abstract :
We report a new concept for the localisation of metallization defects by using cathodoluminescence (CL) imaging. The CL image contrast, which is due to the difference in light reflection characteristics of the contact metal and substrate materials, is used for the localisation of metallization defects. This method is applicable to devices with a luminescent passivation layer and a non-luminescent substrate. Experimental study of a silicon device with a passivation layer of Si3N4/a-SiO2 is reported
Keywords :
cathodoluminescence; failure analysis; metallisation; passivation; Si; Si3N4-SiO2; Si3N4/a-SiO2 passivation layer; cathodoluminescence imaging; contact metal; contrast; light reflection; metallization defects localisation; silicon device; substrate material; Electrons; Failure analysis; High-resolution imaging; Integrated circuit metallization; Integrated circuit reliability; Optical imaging; Optical reflection; Passivation; Semiconductor materials; Substrates;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638343
