DocumentCode
255588
Title
SiC single switch resonant inverters performance dependence on induction load
Author
Bernal, C. ; Avellaned, J. ; Leon, Javier ; Molina, P.
Author_Institution
Group of Power Electron. & Microelectron. - GEPM, Univ. of Zaragoza, Zaragoza, Spain
fYear
2014
fDate
26-28 Aug. 2014
Firstpage
1
Lastpage
7
Abstract
In this paper, a comparison between several induction loads operating in a One Switch - Zero Voltage Switching (1SW-ZVS) resonant converter is presented. The aim is to determine the optimal load for induction cooking systems from the point of view of maximizing the performance of a given active device (Si IGBT or SiC JFET) in this resonant topology.
Keywords
invertors; silicon compounds; switching convertors; wide band gap semiconductors; zero voltage switching; SiC; induction cooking systems; induction load; one switch zero voltage switching resonant converter; optimal load; resonant topology; single switch resonant inverters; Capacitors; Coils; Resistance; Resonant frequency; Switches; Topology; Windings; Induction heating; Resonant Inverter; SiC;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location
Lappeenranta
Type
conf
DOI
10.1109/EPE.2014.6910826
Filename
6910826
Link To Document