• DocumentCode
    2555887
  • Title

    A case study of how pattern density affect metal etch

  • Author

    Ching, Bong Ching ; Yew, Huong Chung ; Tien, David Kho Ching

  • Author_Institution
    X-FAB Sarawak Sdn. Bhd., Kuching
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    629
  • Lastpage
    630
  • Abstract
    The work presented here shows the impact of different macro pattern density on the interconnect profile and CD bias after metal etch processing. These effects are shown to be due to macro loading and passivation affects which differ when wafer level pattern density is changed. The effect of passivation gas on the above phenomenon is also investigated.
  • Keywords
    etching; integrated circuit interconnections; passivation; CD bias; interconnect profile; macro loading; macro pattern density; metal etch; passivation; Etching; Gases; Metals industry; Passivation; Polymers; Protection; Resists; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770404
  • Filename
    4770404
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2555887