DocumentCode
2555928
Title
CMOS standby leakage current problems in microcontroller device
Author
Mamat, Hazian ; Sauli, Zaliman
Author_Institution
Mimos Berhad, Kuala Lumpur
fYear
2008
fDate
25-27 Nov. 2008
Firstpage
631
Lastpage
633
Abstract
Microcontrollers are popular devices uses in small electronic applications. The microcontroller device using CMOS logic processing with 3 metal layers and without CMP tools it makes planarization of ILDpsilas become tougher to handle with SOG machine alone. Most low yield happens when planarization of ILDpsilas layer is not consistence. The standby leakage current was suspected from inter metal dielectric thickness and via 2 resist removal process, which cause the metal line shorting. Investigation has been made and our studies have been carried out to determine the root cause for standby leakage current problem which cause the yield to drop. By using AIT scanning machine, FESEM, thickness, solvent optimization, we are able to prove the root cause for one of the yield killer.
Keywords
CMOS logic circuits; dielectric thin films; integrated circuit yield; leakage currents; microcontrollers; resists; AIT scanning machine; CMOS logic processing; CMOS standby leakage current problem; CMP tools; FESEM; ILD planarization; SOG machine; inter metal dielectric thickness; metal layers; metal line shorting; microcontroller device; resist removal process; CMOS technology; Cleaning; Dielectrics; Etching; Leakage current; MIMO; Microcontrollers; Planarization; Resists; Tungsten;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
Conference_Location
Johor Bahru
Print_ISBN
978-1-4244-3873-0
Electronic_ISBN
978-1-4244-2561-7
Type
conf
DOI
10.1109/SMELEC.2008.4770405
Filename
4770405
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