• DocumentCode
    2555928
  • Title

    CMOS standby leakage current problems in microcontroller device

  • Author

    Mamat, Hazian ; Sauli, Zaliman

  • Author_Institution
    Mimos Berhad, Kuala Lumpur
  • fYear
    2008
  • fDate
    25-27 Nov. 2008
  • Firstpage
    631
  • Lastpage
    633
  • Abstract
    Microcontrollers are popular devices uses in small electronic applications. The microcontroller device using CMOS logic processing with 3 metal layers and without CMP tools it makes planarization of ILDpsilas become tougher to handle with SOG machine alone. Most low yield happens when planarization of ILDpsilas layer is not consistence. The standby leakage current was suspected from inter metal dielectric thickness and via 2 resist removal process, which cause the metal line shorting. Investigation has been made and our studies have been carried out to determine the root cause for standby leakage current problem which cause the yield to drop. By using AIT scanning machine, FESEM, thickness, solvent optimization, we are able to prove the root cause for one of the yield killer.
  • Keywords
    CMOS logic circuits; dielectric thin films; integrated circuit yield; leakage currents; microcontrollers; resists; AIT scanning machine; CMOS logic processing; CMOS standby leakage current problem; CMP tools; FESEM; ILD planarization; SOG machine; inter metal dielectric thickness; metal layers; metal line shorting; microcontroller device; resist removal process; CMOS technology; Cleaning; Dielectrics; Etching; Leakage current; MIMO; Microcontrollers; Planarization; Resists; Tungsten;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on
  • Conference_Location
    Johor Bahru
  • Print_ISBN
    978-1-4244-3873-0
  • Electronic_ISBN
    978-1-4244-2561-7
  • Type

    conf

  • DOI
    10.1109/SMELEC.2008.4770405
  • Filename
    4770405