Characterization setup for device level dynamic load modulation measurements

Author

Thorsell, Mattias ; Andersson, Kristoffer ; Fager, Christian

Author_Institution

Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2009

fDate

7-12 June 2009

Firstpage

1197

Lastpage

1200

Abstract

A dynamic load modulation characterization method is presented. The method gives insight into the device operation under dynamic load modulation conditions. The presented method is based on an active injection load-pull system. The load impedance is dynamically controlled to follow an optimum trajectory, resulting in higher efficiency in back-off operation. On-wafer measurements at 2.14 GHz using a LDMOS device are used to demonstrate the method. The measured results show excellent agreement between static characterization and dynamic measurements.

Keywords

electric impedance; load management; LDMOS device; active injection load-pull system; device level dynamic load modulation measurement; dynamic load modulation characterization; dynamic load modulation condition; frequency 2.14 GHz; load impedance; on-wafer measurement; optimum trajectory; Amplitude modulation; Circuit synthesis; Impedance measurement; Performance evaluation; Power amplifiers; Power generation; Power measurement; Signal generators; Signal synthesis; Voltage measurement; LDMOS; Load modulation; Load-pull;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165917

Filename

5165917