DOE study on etching rate of silicon nitride (Si3N4) layer via RIE nitride etching process

Author

Ghazali, Nasrul Hakim ; Soetedjo, H. ; Ngah, N.A. ; Yusof, A. ; Dolah, A. ; Yahya, M.R.

Author_Institution

Microelectron. & Nanotechnol. Programme (MENT), UPM-MTDC, Serdang

fYear

2008

fDate

25-27 Nov. 2008

Firstpage

649

Lastpage

652

Abstract

In the electronic device fabrication, etching is one of the important processes to do. For this work, the dry etching was done to silicon nitride layer under a CF₄ / O₂ gas mixture using reactive ion etching (RIE) process has been investigated. This etching process was carried out at a room temperature with gas pressure of 500 mTorr, RF power of 60-80 W, O₂ and CF₄ flow rate of 5-10 sccm and 40-50 sccm respectively. From the process, a statistical method of Design of Experiment (DOE) Pro XL software was utilized for appropriate analysis.

Keywords

design of experiments; semiconductor process modelling; silicon compounds; sputter etching; Pro XL software; Si₃N₄; design of experiment; dry etching; etching rate; power 60 W to 80 W; pressure 500 mtorr; reactive ion etching; silicon nitride layer; temperature 293 K to 298 K; Chemical vapor deposition; Design methodology; Dielectric materials; Dry etching; Fabrication; Plasma applications; Radio frequency; Silicon; Statistical analysis; US Department of Energy; DOE; dry etching; silicon nitride;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2008. ICSE 2008. IEEE International Conference on

Conference_Location

Johor Bahru

Print_ISBN

978-1-4244-3873-0

Electronic_ISBN

978-1-4244-2561-7

Type

conf

DOI

10.1109/SMELEC.2008.4770409

Filename

4770409