Title :
Circuit mismatch influence on performance of paralleling silicon carbide MOSFETs
Author :
Helong Li ; Munk-Nielsen, Stig ; Cam Pham ; Beczkowski, Szymon
Author_Institution :
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
Abstract :
This paper focuses on circuit mismatch influence on performance of paralleling SiC MOSFETs. Power circuit mismatch and gate driver mismatch influences are analyzed in detail. Simulation and experiment results show the influence of circuit mismatch and verify the analysis. This paper aims to give suggestions on paralleling discrete SiC MOSFETs and designing layout of power modules with paralleled SiC MOSFETs dies.
Keywords :
MOSFET; power semiconductor devices; silicon compounds; wide band gap semiconductors; MOSFET; SiC; circuit mismatch influence; gate driver mismatch; power circuit mismatch; Integrated circuit modeling; Logic gates; MOSFET; Performance evaluation; Silicon carbide; Simulation; Transient analysis; MOSFET; Parallel operation; Silicon Carbide (SiC); Wide bandgap devices;
Conference_Titel :
Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on
Conference_Location :
Lappeenranta
DOI :
10.1109/EPE.2014.6910835
