Title :
Cathodoluminescence evaluation of electrical stress condition of Si-SiO2 structures
Author :
Liu, X. ; Chan, D.S.H. ; Phang, J.C.H. ; Chim, W.K.
Author_Institution :
Centre for Integrated Circuit Failure Anal. & Reliability, Nat. Univ. of Singapore, Singapore
Abstract :
In this paper, we describe the observation of a new phenomenon which may be extended to provide a non electrical and physical evaluation of the electrical stress degradation of Si-SiO2 structures. Two novel observations, the hot-electron-injection-induced 2.7 eV luminescence centers and the interfacial stress dependence of the 2.7 eV CL peak build-up, are described
Keywords :
cathodoluminescence; elemental semiconductors; hot carriers; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; Si-SiO2 structure; cathodoluminescence; electrical stress degradation; hot electron injection; interfacial stress; Bipolar transistors; Failure analysis; Integrated circuit reliability; Luminescence; Reliability engineering; Scanning electron microscopy; Semiconductor device measurement; Thermal degradation; Thermal stresses; Voltage;
Conference_Titel :
Physical & Failure Analysis of Integrated Circuits, 1997., Proceedings of the 1997 6th International Symposium on
Print_ISBN :
0-7803-3985-1
DOI :
10.1109/IPFA.1997.638345
