A new method for forming ZnTe contacts for CdTe cells [solar cells]

Author

Mondal, Anup ; Birkmire, Robert W. ; McCandless, Brian E.

Author_Institution

Inst. of Energy Conversion, Delaware Univ., Newark, DE, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

1126

Abstract

An electrochemical technique (galvanic) has been developed for directly depositing ZnTe films doped with Cu onto evaporated CdTe/CdS/ITO/glass substrates to form a semitransparent p⁺ contact to the CdTe. The CdTe/CdS/ITO/glass substrates were placed in a solution containing ZnCl₂ and dissolved TeO₂, and were short circuited externally to a Zn electrode. Uniform, single-phase ZnTe films were obtained for specific pH, temperature, and concentration regimes of the reacting ions. Copper doping of the ZnTe films was achieved by adding an appropriate amount of Cu⁺² ions complexed with triethanolamine to the solution. The results of ZnTe:Cu/CdTe/CdS solar cells fabricated using this method are discussed

Keywords

II-VI semiconductors; cadmium compounds; copper; electrical contacts; electrodeposition; electrodeposits; semiconductor doping; semiconductor thin films; solar cells; zinc compounds; ZnTe:Cu-CdTe-CdS solar cells; doping; electrical contacts; electrochemical technique; electrode; galvanic method; semiconductor; semitransparent p⁺ contact; substrates; thin films; Circuits; Copper; Doping; Electrodes; Galvanizing; Glass; Indium tin oxide; Photovoltaic cells; Temperature; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169386

Filename

169386