Title :
C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE
Author :
Shigematsu, H. ; Inoue, Y. ; Akasegawa, A. ; Yamada, M. ; Masuda, S. ; Kamada, Y. ; Yamada, A. ; Kanamura, M. ; Ohki, T. ; Makiyama, K. ; Okamoto, N. ; Imanishi, K. ; Kikkawa, T. ; Joshin, K. ; Hara, N.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; gallium compounds; wide band gap semiconductors; C-band power amplifier; GaN; HEMT; X-band power amplifier; frequency 4.8 GHz; frequency 9.8 GHz; heat distribution; output power; power added efficiency; size 0.25 mum; size 0.8 mum; three-stage impedance transformers; two-chip configurations; Broadband amplifiers; Dielectric substrates; Gallium nitride; High power amplifiers; Impedance; Power amplifiers; Power generation; Radar applications; Spaceborne radar; Transformers; C-band; GaN; PAE; X-band; power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165934
