Title :
A 33W GaN HEMT Doherty amplifier with 55% drain efficiency for 2.6GHz base stations
Author :
Deguchi, Hiroaki ; Ui, Norihiko ; Ebihara, Kaname ; Inoue, Kazutaka ; Yoshimura, Norihiro ; Takahashi, Hidenori
Author_Institution :
Eudyna Devices Inc., Yokohama, Japan
Abstract :
A 33 W average output power Doherty power amplifier (PA) for 2.6 GHz band was developed using compact package advanced GaN HEMTs which have Cds reduced 20%. A small-footprint Doherty network was successfully designed with plain small signal analysis, and the method was very practical. The Doherty PA exhibited a saturation output power of 52.5 dBm (178 W) and a saturated drain efficiency of 65.6%. The Doherty PA also achieved a drain efficiency of 55%, an ACLR of -52.8 dBc and a power gain of 13.8 dB at the average output power of 45.2 dBm (33 W) with 4-carrier W-CDMA signal at 2.6 GHz using commercially available digital pre-distortion system. These excellent performances show good suitability for 2.6 GHz band base stations (BTS), for example, W-CDMA, LTE and WiMAX, and small-sized circuit structure contributes to realize compact remote radio head type of BTS.
Keywords :
III-V semiconductors; UHF power amplifiers; code division multiple access; gallium compounds; high electron mobility transistors; mobile radio; 4-carrier W-CDMA signal; Doherty power amplifier; GaN HEMT; base station; digital predistortion system; frequency 2.6 GHz; power 33 W; small signal analysis; wideband code division multiple access; Base stations; Gain; Gallium nitride; HEMTs; Multiaccess communication; Packaging; Power amplifiers; Power generation; Signal analysis; Signal design; Doherty; GaN HEMT; LTE; W-CDMA; WiMAX; digital pre-distortion (DPD); power amplifiers;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165936