DocumentCode :
2556588
Title :
1998 IEEE International Integrated Reliability Workshop Final Report (Cat. No.98TH8363)
Author :
Okuno, Hirotsugu ; Tominaka, T. ; Fujishima, S. ; Mitsumoto, T. ; Kubo, T. ; Kawaguchi, Tatsuki ; Kim, Jung-Wook ; Ikegami, Kenshin ; Sakamoto, Naohisa ; Yokouchi, S. ; Morikawa, T. ; Tanaka, T. ; Goto, Akira ; Yano, Yuichiro
Author_Institution :
RIKEN, Inst. of Phys. & Chem. Res., Saitama, Japan
fYear :
1998
fDate :
12-15 Oct 1998
Firstpage :
1075
Abstract :
The following topics were dealt with: oxide reliability analysis; DRAM reliability; electromigration; stress voiding; plasma damage; interconnect reliability; oxide breakdown
Keywords :
DRAM chips; electric breakdown; electromigration; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; DRAM reliability; electromigration; interconnect reliability; oxide breakdown; oxide reliability analysis; plasma damage; stress voiding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
Type :
conf
DOI :
10.1109/IRWS.1998.745357
Filename :
745357
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2556588
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