Current oscillations in multiple quantum well GaInNAs/GaAs p-i-n structures

Summary form only given. Photoconductivity in reverse and forward biased Ga0.952In0.048N0.016As0.984/GaAs multiple quantum well p-i-n structures is investigated in a temperature range between T = 20 K and 300 K. When the samples are under illumination with photons, ħω > EG (GaAs), the I–V characteristics show current oscillations whose amplitude depends on the temperature, wavelength and intensity of the excitation, and the number of QWs in the device. (Up to 8 and 18 oscillations have been observed in the 10 and 20 MQW devices respectively). They disappear at temperatures above T ∼ 200 K and the oscillations are not present in darkness. We propose a model to account for the observations based on the carrier tunneling and thermionic emission in the GaInNAs QWs. Comparative studies on p-i-n and n-i-p type structures are also performed.