Carrier dynamics and gain characteristics of 1.3 µm GaInNAs Quantum Well lasers on GaAs substrate

Summary form only given. It has been observed experimentally that the band edge photoluminescence of GaInNAs Quantum Well (QW) materials is broadened resulting from band-tailing, localised states or conduction band edge fluctuations. We have developed a model for N compositional fluctuations causing conduction band edge fluctuations which localise electrons into the resulting Quantum Dots (QDs). The electron dynamics in both QW and QDs states are examined using a four-rate-equation considering gain processes from both QW and QDs, which is shown in Eq. (1). The mechanism was proved to lead to broad gain in GaInNAs QW structure which could be useful for broad-band Semiconductor Optical Amplifier (SOAs) for optical communications.