A study of stress voiding effect on AlSi metal bank allowed lifetime for IC foundry fabs

Author

Lin, Kuang-Peng ; Chang, Chai-Der ; Huang, Kwo-Shu ; Hsu, Shun-Liang

Author_Institution

Process Integration Dept., Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan

fYear

1998

fDate

12-15 Oct 1998

Firstpage

19

Lastpage

22

Abstract

We introduce a mechanism for metal void formation that is due to an interfacial vacancy in the underlying dielectric. These voids will occur during a period of storage in a metal bank. An experiment was conducted to detect metal voids more easily and to evaluate a process-design modification to prevent the formation of these voids. For mask ROM products, this work has helped assure the reliability of metallized wafers stored for long periods of time

Keywords

aluminium alloys; integrated circuit metallisation; silicon alloys; stress relaxation; vacancies (crystal); voids (solid); AlSi; AlSi metal bank; IC foundry fab; dielectric; interfacial vacancy; mask ROM product; metallization; reliability; storage lifetime; stress voiding; Anisotropic magnetoresistance; Etching; Foundries; Manufacturing processes; Metallization; Oxidation; Polymer films; Read only memory; Silicon compounds; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1998. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-4881-8

Type

conf

DOI

10.1109/IRWS.1998.745361

Filename

745361