Title :
A study of stress voiding effect on AlSi metal bank allowed lifetime for IC foundry fabs
Author :
Lin, Kuang-Peng ; Chang, Chai-Der ; Huang, Kwo-Shu ; Hsu, Shun-Liang
Author_Institution :
Process Integration Dept., Taiwan Semicond. Manuf. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
We introduce a mechanism for metal void formation that is due to an interfacial vacancy in the underlying dielectric. These voids will occur during a period of storage in a metal bank. An experiment was conducted to detect metal voids more easily and to evaluate a process-design modification to prevent the formation of these voids. For mask ROM products, this work has helped assure the reliability of metallized wafers stored for long periods of time
Keywords :
aluminium alloys; integrated circuit metallisation; silicon alloys; stress relaxation; vacancies (crystal); voids (solid); AlSi; AlSi metal bank; IC foundry fab; dielectric; interfacial vacancy; mask ROM product; metallization; reliability; storage lifetime; stress voiding; Anisotropic magnetoresistance; Etching; Foundries; Manufacturing processes; Metallization; Oxidation; Polymer films; Read only memory; Silicon compounds; Thermal stresses;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745361
