DocumentCode :
2556698
Title :
Evaluation of a model for prebreakdown at the cathode in a DC-stressed liquid
Author :
Pace, M.O. ; Alexeff, I. ; Wintenberg, A.L. ; Blalock, T.V.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
fYear :
1990
fDate :
3-6 Jun 1990
Firstpage :
47
Lastpage :
51
Abstract :
A nonlinear model is simulated for a partial discharge, or low density region (LDR), at a DC-stressed needle cathode in hexane for several ambient pressures from subatmospheric to 3 atm. It assumes a void driven in the liquid from the cathode by electrical force on the void´s charged liquid boundary (LDR wall). The effects of varying certain parameters on the simulation results are discussed. Simulation results are compared with earlier experimental values of LDR size, pulse charges, and pulse duration as functions of time and pressure. The results suggest that the LDR is driven by electrical pressure which is initially much larger than typical ambient pressures but which drops during the LDR expansion to below ambient pressure, resulting in the demise of the LDR. Current pulses are then produced as a result of the expansion (rather than being its cause), and they serve as externally detectable telemetry signals characterizing the LDR state without invading it. The pulses result when the LDR grows and its trapped charge spreads over larger wall area, changing the LDR wall potential
Keywords :
dielectric properties of liquids and solutions; electric breakdown of liquids; organic compounds; partial discharges; DC-stressed liquid; ambient pressures; cathode; charged liquid boundary; externally detectable telemetry signals; hexane; low density region; model; nonlinear model; partial discharge; prebreakdown; pulse charges; pulse duration; void; wall area; Atmospheric modeling; Cathodes; Computational modeling; Electric breakdown; Electrostatics; Geometry; NIST; Needles; Partial discharges; Solid modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1089-084X
Type :
conf
DOI :
10.1109/ELINSL.1990.109705
Filename :
109705
Link To Document :
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