• DocumentCode
    2556770
  • Title

    Complete method for Ebd correction by series resistance characterization

  • Author

    Monroe, David K. ; Swanson, Scot E.

  • Author_Institution
    Reliability Phys. Dept., Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    1998
  • fDate
    12-15 Oct 1998
  • Firstpage
    33
  • Lastpage
    38
  • Abstract
    We have developed a semi-automated method for determining the series resistance profiles of dot capacitors and for obtaining corrected oxide fields at breakdown. This method is based upon a least-squares-fit of IV data, obtained from a voltage-ramp test, to the Fowler-Nordheim leakage model. The profiles provide insight into the general characteristics of series resistance. Certain features of the profiles can be associated with charge trapping and the onset of oxide breakdown
  • Keywords
    MOS capacitors; electric breakdown; least squares approximations; Fowler-Nordheim leakage model; I-V characteristics; MOS capacitor; SiO2; charge trapping; dot capacitor; electric breakdown; least squares approximation; oxide field; series resistance; voltage ramp testing; Breakdown voltage; Capacitance-voltage characteristics; Capacitors; Contacts; Electric breakdown; Electrical resistance measurement; Monitoring; Pollution measurement; Testing; Video recording;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 1998. IEEE International
  • Conference_Location
    Lake Tahoe, CA
  • Print_ISBN
    0-7803-4881-8
  • Type

    conf

  • DOI
    10.1109/IRWS.1998.745364
  • Filename
    745364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2556770