Title :
A Comparison of Si CMOS and SiGe BiCMOS Technologies for Automotive Radars
Author_Institution :
Toyota Res. Inst. North America, Ann Arbor, MI
Abstract :
This paper compares CMOS FET and SiGe HBT technologies for automotive applications and discusses limitations and opportunities for further development of both. SiGe circuits have demonstrated very promising performance, especially for the stringent reliability requirements and high temperature operating conditions set by the automotive industry. Their introduction to radar systems will occur in the near future. In the long run CMOS devices have the potential to become competitive in performance and offer opportunities for further reductions in manufacturing costs.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; automotive electronics; elemental semiconductors; field effect transistors; heterojunction bipolar transistors; integrated circuit reliability; road vehicle radar; silicon; BiCMOS technologies; CMOS technologies; FET; GeSi; HBT; Si; automotive applications; automotive radars; high temperature operating conditions; reliability requirements; Automotive applications; Automotive engineering; BiCMOS integrated circuits; CMOS technology; FETs; Germanium silicon alloys; Heterojunction bipolar transistors; Radar; Silicon germanium; Temperature;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770485
