Cadmium zinc sulfide films for heterojunctions devices

Polycrystalline films of Cd_1-xZn_xS have been deposited on glass and TCS-coated glass substrates by metalorganic chemical vapor deposition (MOCVD). The deposition rate, bandgap energy, resistivity, and doping of Cd_1-xZn_xS films depend on the substrate temperature and composition and flow rate of the reaction mixture. The effect of the reaction mixture composition on the bandgap energy of Cd_1-xZn_xS has been determined. The dark lateral resistivity of ZnS-rich Cd_1-xZn_xS films is 10⁶ Ω-cm or higher, and can be reduced by using octyl chloride as a dopant. The extent of dopant incorporation becomes increasingly difficult as the Zn content in the film increases