Title :
A constant gate current technique for obtaining low-frequency C-V characteristics of MOS capacitors
Author :
Qian, Jack G. ; Hensley, Roy A. ; Littefield, Eric
Author_Institution :
Dallas Semicond. Inc., TX, USA
Abstract :
A simple and accurate technique for low-frequency MOSFET gate capacitance measurement using the voltage response of these devices to constant gate current is described. The capability of this technique is demonstrated in Capacitance-Voltage (C-V) curves by showing the effects of gate current on the MOS characteristics. Using a Hewlett-Packard 4156 (HP4156) precision semiconductor parameter analyzer to measure the rate of voltage change across MOS capacitors while forcing a constant current, accurate C-V curve are derived over the 1pF to 1nF range
Keywords :
MOS capacitors; MOSFET; capacitance measurement; semiconductor device measurement; 1 pF to 1 nF; Hewlett-Packard 4156 semiconductor parameter analyzer; MOS capacitor; MOSFET gate capacitance measurement; constant gate current technique; low-frequency capacitance-voltage characteristics; Capacitance; Capacitance-voltage characteristics; Current measurement; Equations; Force measurement; Frequency; Instruments; MOS capacitors; MOSFET circuits; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745365
