DocumentCode :
2556819
Title :
Inverse modeling of oxid deposition using measurements of a TEOS CVD process
Author :
Sheikholeslami, A. ; Holzer, S. ; Heitzinger, C. ; Leicht, M. ; HaNaberlen, O. ; Fugger, J. ; Grasser, T. ; Selberherr, S.
Volume :
2
fYear :
2005
fDate :
25-28 July 2005
Firstpage :
79
Lastpage :
82
Keywords :
Analytical models; Chemical analysis; Chemical vapor deposition; Circuit simulation; Inverse problems; Level set; Microelectronics; Predictive models; Semiconductor device modeling; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Research in Microelectronics and Electronics, 2005 PhD
Print_ISBN :
0-7803-9345-7
Type :
conf
DOI :
10.1109/RME.2005.1542941
Filename :
1542941
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2556819
