Electric field and temperature acceleration of quasi-breakdown phenomena in ultrathin oxides

Author

Roy, D. ; Bruyere, S. ; Vincent, E. ; Ghibaudo, G.

Author_Institution

Central R&D Labs., STMicroelectron., Crolles, France

fYear

1998

fDate

12-15 Oct 1998

Firstpage

49

Lastpage

54

Abstract

In this paper the quasi-breakdown phenomenon is studied for 3.5 nm ultrathin gate oxides. The appearance of this failure mode is investigated and the associated leakage current is characterized. Moreover the electric field and temperature dependence of the quasi-breakdown occurrence is analyzed: a novel procedure is proposed in order to determine the associated acceleration and to be able to predict the reliability with respect to this failure mode at nominal use conditions for deep-submicron technologies. It is shown that quasi-breakdown phenomenon is a major limiting factor for the ultrathin oxide reliability

Keywords

electric breakdown; insulating thin films; silicon compounds; SiO₂; deep-submicron technology; electric field dependence; failure mode; leakage current; quasi-breakdown; reliability; temperature dependence; ultrathin gate oxide; Acceleration; CMOS technology; Electrons; Failure analysis; Leakage current; MOS capacitors; Research and development; Stress; Temperature dependence; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1998. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-4881-8

Type

conf

DOI

10.1109/IRWS.1998.745367

Filename

745367