DocumentCode :
2556855
Title :
Improvements on long term memory modeling in power amplifiers.
Author :
Ngoya, Edouard ; Quindroit, Christophe ; Nébus, Jean-Michel
Author_Institution :
XLIM, Univ. of Limoges, Limoges, France
fYear :
2009
fDate :
7-12 June 2009
Firstpage :
1357
Lastpage :
1360
Abstract :
This paper addresses the behavioral modeling for radio frequency amplifiers in communication systems design. The RF front-end in new communication systems is faced with variable envelope and large bandwidth signals (including desired signals and large interferers), which require the behavioral model of the amplifying unit (either in TX or RX) to accurately account for nonlinear memory effects. A tremendous amount of work has been devoted to the subject; nevertheless critical issues remain to accomplish a model that performs equally well with all possible input stimuli. This communication focuses on the particular point of long term memory identification. A new model equation is proposed that improves the previous modeling approaches.
Keywords :
power amplifiers; radiocommunication; radiofrequency amplifiers; RF front-end; communication systems design; long term memory modeling; nonlinear memory effect; radio frequency amplifier; Bandwidth; Circuits; Interchannel interference; Nonlinear distortion; Nonlinear equations; Power amplifiers; Power system modeling; RF signals; Radio frequency; Radiofrequency amplifiers; Behavioral modeling; Nonlinear Memory; Power Amplifier; Volterra Series;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2009.5165957
Filename :
5165957
Link To Document :
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