A new mechanism for gate oxide degradation and its applications

Author

Liu, Chuan H. ; Fu, K.Y. ; DeMassa, Thomas A. ; Sanchez, Julian J.

Author_Institution

United Microelectron. Corp., Hsin-Chu City, Taiwan

fYear

1998

fDate

12-15 Oct 1998

Firstpage

68

Lastpage

71

Abstract

A surface plasmon (SP) based anode hole injection model for gate oxide degradation/breakdown is presented. This model proposes that the hole trapping in the oxide is mainly due to injected holes from the anode that are generated by the decay of the SP´s to electron-hole pairs at the anode interface, finally resulting in oxide breakdown when the trapped positive charge accumulates to a critical value. The surface plasmon excitation energy is shown to decrease with increasing temperature, which in turn causes the positive charge generation to increase and the charge to breakdown to decrease

Keywords

accumulation layers; charge injection; electric breakdown; hole traps; surface plasmons; breakdown; charge to breakdown; electron-hole pairs; gate oxide degradation; hole trapping; injected holes; oxide breakdown; positive charge generation; surface plasmon based anode hole injection model; surface plasmon excitation energy; trapped positive charge; Anodes; Charge carrier processes; Degradation; Electric breakdown; Electron traps; Impact ionization; Phonons; Plasmons; Semiconductor device modeling; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop Final Report, 1998. IEEE International

Conference_Location

Lake Tahoe, CA

Print_ISBN

0-7803-4881-8

Type

conf

DOI

10.1109/IRWS.1998.745370

Filename

745370