Title :
Fully Integrated Millimeter-Wave VCO with 32% Tuning Range
Author :
Liu, Gang ; Chartier, Sébastien ; Trasser, Andreas ; Schumacher, Hermann
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg im Breisgau
Abstract :
In this paper, the authors present a fully integrated VCO with 32% tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 mum Si/SiGe HBT technology with fT and fmax of 80 and 90 GHz, respectively. It consumes 195 mW DC power and provides an output power of more than 5 dBm. A phase noise of -93 dBc/Hz at 1 MHz offset was measured for the free running VCO.
Keywords :
Ge-Si alloys; bipolar MIMIC; circuit tuning; elemental semiconductors; heterojunction bipolar transistors; integrated circuit noise; millimetre wave bipolar transistors; millimetre wave oscillators; phase noise; semiconductor device noise; silicon; voltage-controlled oscillators; Si-SiGe; Si-SiGe HBT technology; dc power; frequency 38.9 GHz; frequency 80 GHz; frequency 90 GHz; fully integrated millimeter-wave VCO; phase noise; power 195 mW; tuning; Circuit optimization; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Millimeter wave radar; Millimeter wave technology; Millimeter wave transistors; Silicon germanium; Substrates; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770489
