DocumentCode :
2556991
Title :
The dielectric behavior of plasma-treated insulator surfaces
Author :
Tu, Demin ; Liu, Xuezhong ; Gao, Liangyu ; Liu, Qichang ; Kao, Kwan C.
Author_Institution :
Dept. of Electr. Eng., Xi´´an Jiaotong Univ., China
fYear :
1990
fDate :
3-6 Jun 1990
Firstpage :
96
Lastpage :
99
Abstract :
A novel technique of treating insulator surfaces by means of a suitable plasma is presented. It suppresses the presence of hydrophilic ions or groups on the surfaces of glass and porcelain insulators and makes the formation of a hydrophobic surface possible. Experimental results show that the plasma-treated surfaces of the glass and the porcelain insulators exhibit excellent stability during accelerated aging test under thermal stress and exposure to ultraviolet radiation, and also after immersion in solvent, acid, or alkali solutions. The AC flashover voltage is 56% higher for the insulators with plasma treatment than those without such treatment under an artificial fog condition (with salt density of 0.1 mg/cm3). The surface resistance is about three times higher under the same artificial fog condition for the insulators with plasma treatment. On the basis of an analysis of secondary ion mass spectroscopy and infrared spectra results, the mechanisms responsible for the formation of a stable and effective hydrophobic surface by plasma treatment are discussed
Keywords :
ageing; flashover; insulation testing; insulators; surface treatment; AC flashover; accelerated aging test; artificial fog condition; dielectric behavior; glass; hydrophobic surface; infrared spectra; plasma-treated insulator surfaces; porcelain insulators; secondary ion mass spectroscopy; stability; surface resistance; thermal stress; ultraviolet radiation; Dielectrics and electrical insulation; Glass; Plasma accelerators; Plasma density; Plasma stability; Porcelain; Surface resistance; Surface treatment; Thermal stability; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on
Conference_Location :
Toronto, Ont.
ISSN :
1089-084X
Type :
conf
DOI :
10.1109/ELINSL.1990.109717
Filename :
109717
Link To Document :
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