DocumentCode :
2557073
Title :
C-V Measurements - And Its Implication On Oxide, Transistor And Non-volatile Memory Cell Reliability
Author :
Schwalke, Udo ; Gordon, Bart
fYear :
1998
fDate :
15-15 Oct. 1998
Firstpage :
97
Lastpage :
98
Keywords :
Capacitance-voltage characteristics; Current measurement; Doping; Frequency measurement; Nonvolatile memory; Quantum capacitance; Testing; Thickness measurement; Time measurement; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-4881-8
Type :
conf
DOI :
10.1109/IRWS.1998.745378
Filename :
745378
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2557073
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