Title :
Investigation of initial charge trapping and oxide breakdown under Fowler-Nordheim injection
Author_Institution :
Semicond. Div., Siemens AG, Munich, Germany
Abstract :
The aim of this work is to assess the trapping characteristics during constant voltage stress and to demonstrate the impact of charge trapping under F-N injection on the time to breakdown. Trapping characteristics are investigated on the basis of current-time (I-t) curves under F-N injection
Keywords :
MOS capacitors; charge injection; electron traps; semiconductor device breakdown; tunnelling; F-N injection; Fowler-Nordheim injection; MOS capacitors; charge trapping; constant voltage stress; current-time curve; initial charge trapping; oxide breakdown; time to breakdown; trapping characteristics; Acceleration; Capacitance measurement; Capacitance-voltage characteristics; Electric breakdown; Electron traps; Performance evaluation; Semiconductor device breakdown; Stress measurement; Testing; Tunneling;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745379
