Low Voltage Class-E Power Amplifiers for DECT and Bluetooth in 130nm CMOS

Author

Fritzin, Jonas ; Alvandpour, Atila

Author_Institution

Dept. of Electr. Eng., Linkoping Univ., Linkoping

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

This paper presents the design of two low- voltage differential class-E power amplifiers (PA) for DECT and Bluetooth fabricated in 130 nm CMOS. In order to minimize the on-chip losses and to achieve a high efficiency at low supply voltages, the PAs do not use on-chip output matching networks. At 1.5V supply voltage, the DECT PA delivers +26.4 dBm of output power with a drain efficiency (DE) and power-added efficiency (PAE) of 41% and 30%, respectively. The Bluetooth PA delivers +22.7 dBm at IV with a DE and PAE of 48% and 36%, respectively. A continuous long-term test of 100 hours proves the reliability of the design.

Keywords

Bluetooth; CMOS integrated circuits; cordless telephone systems; differential amplifiers; power amplifiers; reliability; Bluetooth; CMOS; DECT; class-E power amplifiers; differential power amplifiers; drain efficiency; low voltage; on-chip losses; power-added efficiency; reliability; size 130 nm; time 100 hour; voltage 1 V; voltage 1.5 V; Bluetooth; CMOS technology; Capacitance; Driver circuits; Impedance matching; Inverters; Low voltage; Network-on-a-chip; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770499

Filename

4770499