Title :
Investigation on the reduction of the dark current for PIN silicon photodiodes using statistical methods
Author :
Aceves, Mariano ; Rosales, P. ; Cerdeira, A. ; Estrada, M. ; Cabal, A.E. ; Ramírez, J.
Author_Institution :
INAOE, Puebla, Mexico
Abstract :
A study of some process steps normally used in the manufacture of PIN diodes is performed. The goal is to determine which processes are more likely to result in lower leakage current in high resistivity silicon PIN photodiodes. In an effort to reduce the number of experimental trials, the study uses two Taguchi orthogonal arrays. ANOVA and other statistical methods are used to analyze the results
Keywords :
dark conductivity; elemental semiconductors; leakage currents; p-i-n photodiodes; silicon; ANOVA; PIN silicon photodiodes; Si; Taguchi orthogonal arrays; dark current; leakage current; statistical methods; Conductivity; Dark current; Diodes; Fabrication; Implants; Leakage current; Photodiodes; Semiconductor device measurement; Silicon; Statistical analysis;
Conference_Titel :
Integrated Reliability Workshop Final Report, 1998. IEEE International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-4881-8
DOI :
10.1109/IRWS.1998.745381
