Title :
A 45GHz, 14mW Rotary Wave Voltage-Controlled Oscillator
Author :
Nouri, Neda ; Buckwalter, James
Author_Institution :
Univ. of British Columbia, Vancouver, BC
Abstract :
A low-power, multiphase voltage-controlled oscillator for RF/microwave applications is presented. The oscillator circuit utilizes a combination of standing wave and traveling wave behavior to generate a low-phase noise output. The oscillator operates at 45 GHz with a 5% tuning range and has a phase noise of -89.06 dB/Hz at an offset frequency of 1 MHz. This circuit is fabricated in a 0.12-mum SiGe BiCMOS process and uses only NMOS devices for the oscillator core. At a supply voltage of 1.2 V, the power consumption of the oscillator core is 14 mW.
Keywords :
BiCMOS integrated circuits; millimetre wave oscillators; phase noise; voltage-controlled oscillators; BiCMOS process; RF applications; frequency 45 GHz; low-phase noise output; microwave applications; multiphase voltage-controlled oscillator; offset frequency; power 14 mW; power consumption; rotary wave voltage-controlled oscillator; size 0.12 mum; standing wave; supply voltage; traveling wave; voltage 1.2 V; Circuit noise; Circuit optimization; Germanium silicon alloys; Microwave oscillators; Noise generators; Phase noise; Radio frequency; Silicon germanium; Tuning; Voltage-controlled oscillators;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770500
