A K-Band nMOS SPDT Switch and Phase Shifter Implemented in 130nm SiGe BiCMOS Technology

The design and performance of optimized K-band nMOS SPDT switches and a switched-line 180deg single-bit phase shifter are presented. The design demonstrates the use of low insertion loss nMOSFET switches in 130 nm silicon-germanium (SiGe) BiCMOS technology. Design and layout optimization approaches for MOSFET based series-shunt, single-pole double-throw (SPDT) switches have been investigated. The designed switches use deep trench substrate isolation and have an insertion loss of 2 dB and isolation better than 15 dB up to 20 GHz. The 180deg 1-bit phase shifter, built from these switches and delay lines shows an insertion loss of 4.5 plusmn 0.5 dB at 20 GHz while maintaining input and output reflection coefficients better than -15 dB.