Title :
Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Author :
Wang, Shumin ; Song, Yuxin ; Roy, Ivy Saha
Author_Institution :
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Göteborg, Sweden
Abstract :
We report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
Keywords :
III-V semiconductors; X-ray diffraction; bismuth; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor growth; GaSbBi; InSbBi; X-ray diffraction; bismuth incorporation; lattice contraction; molecular beam epitaxy; Atomic measurements; Bismuth; Bonding; Lattices; Molecular beam epitaxial growth; Shape; X-ray scattering;
Conference_Titel :
Transparent Optical Networks (ICTON), 2011 13th International Conference on
Conference_Location :
Stockholm
Print_ISBN :
978-1-4577-0881-7
Electronic_ISBN :
2161-2056
DOI :
10.1109/ICTON.2011.5970830
