Avalanche ruggedness of 800V Lateral IGBTs in bulk Si

Author

Camuso, G. ; Udugampola, N. ; Pathirana, V. ; Trajkovic, T. ; Udrea, F.

Author_Institution

Eng. Dept., Univ. of Cambridge, Cambridge, UK

fYear

2014

fDate

26-28 Aug. 2014

Firstpage

1

Lastpage

9

Abstract

Avalanche capability of 800V rated Lateral IGBTs (LIGBTs) fabricated using bulk CMOS technology has been investigated for the first time for both turn-on and turn-off. The LIGBTs have been designed for 65kHz operation in energy-efficient, compact off-line power supplies. Measurements of the device during turn-on revealed failures under high line voltages. The device was analysed using a combination of measurements and simulations which revealed that the dynamic avalanche was the cause of failure. An optimised LIGBT has been designed, simulated, fabricated and tested. The optimised device exhibits higher breakdown voltage and improved turn-on avalanche capability. Moreover, the optimised device showed improved avalanche capability during turn-off and reduced likelihood of latch-up.

Keywords

CMOS integrated circuits; elemental semiconductors; insulated gate bipolar transistors; power supply circuits; silicon; Si; avalanche capability; avalanche ruggedness; breakdown voltage; bulk CMOS technology; bulk silicon; compact off-line power supplies; dynamic avalanche; energy-efficient power supplies; frequency 65 kHz; latch-up; lateral IGBT; voltage 800 V; Analytical models; Capacitors; Current measurement; Insulated gate bipolar transistors; Integrated circuit modeling; Switches; Voltage measurement; Device simulation; High voltage ICs; IGBT; Measurement; Power semiconductor device; Robustness;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications (EPE'14-ECCE Europe), 2014 16th European Conference on

Conference_Location

Lappeenranta

Type

conf

DOI

10.1109/EPE.2014.6910917

Filename

6910917