Title :
A Thin-Film SOI 180nm CMOS RF Switch
Author :
Wolf, R. ; Joseph, A. ; Botula, A. ; Slinkman, J.
Author_Institution :
IBM Microelectron., Essex Junction, VT
Abstract :
This paper describes a single pole, single throw (SPST) 180 nm CMOS thin film SOI switch developed for the most difficult cellular and 802.11x RF switch applications. We will show that power handling, linearity, insertion loss, isolation and switching times are competitive with switch applications utilizing GaAs pHEMT and silicon- on-sapphire technologies.
Keywords :
CMOS integrated circuits; elemental semiconductors; microwave switches; semiconductor switches; silicon; silicon-on-insulator; CMOS; RF Switch; Si; insertion loss; isolation times; linearity; power handling; size 180 nm; switching times; thin-film SOI; CMOS technology; Communication switching; FETs; Gallium arsenide; Insertion loss; Radio frequency; Silicon on insulator technology; Switches; Transistors; Transmitters;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770520
