DocumentCode :
2557660
Title :
A Compact DC-30 GHz 0.13-um CMOS SP4T Switch
Author :
Min, Byung-Wook ; Rebeiz, Gabriel M.
Author_Institution :
Qualcomm Inc., Santa Clara, CA
fYear :
2009
fDate :
19-21 Jan. 2009
Firstpage :
1
Lastpage :
4
Abstract :
This paper presents a DC-30 GHz single-pole-four-throw (SP4T) CMOS switch using 0.13 mum CMOS process. The CMOS transistor layout is done to minimize the substrate network resistance. The on-chip matching inductors and routing are designed for a very small die area (250times180 mum2), and modeled using full-wave EM simulations. The SP4T CMOS switch result in an insertion loss of 1.8 dB and 2.7 dB at 5 GHz and 24 GHz, respectively. The isolation is >25 dB up to 30 GHz and achieved using a series-shunt switch configuration. The measured input P1 dB and IIP3 of the SP4T switch are 9 dBm and 21 dBm, respectively. To our knowledge, this is the first ultra wideband CMOS SP4T switch and with a very small chip area.
Keywords :
CMOS integrated circuits; inductors; microwave switches; network routing; CMOS transistor layout; compact DC switch; frequency 24 GHz; frequency 30 GHz; frequency 5 GHz; insertion loss; on-chip matching inductors; routing; series-shunt switch configuration; single-pole-four-throw CMOS switch; size 0.13 mum; substrate network resistance; CMOS process; Communication switching; Contact resistance; Immune system; Power semiconductor switches; Radio frequency; Roentgenium; Semiconductor device modeling; Substrates; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
Type :
conf
DOI :
10.1109/SMIC.2009.4770521
Filename :
4770521
Link To Document :
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