Title :
The preparation of SiGe thermoelectric materials by mechanical alloying
Author :
Cook, B.A. ; Beaudry, B.J. ; Harringa, J.L. ; Barnett, W.J.
Author_Institution :
Ames Lab., Iowa State Univ., Ames, IA, USA
Abstract :
The preparation of SiGe thermoelectric materials by mechanical alloying was studied. This technique has the advantage of producing homogeneous, fine-grained alloys at room temperature. Optical metallography and electronic microscopy have indicated that the average particle/grain size of the alloys produced is considerably less than 1 μm. X-ray diffraction measurements have verified alloy formation in these materials. Electrical resistivity, Seebeck coefficient, and thermal diffusivity have been measured on several hot pressed compacts and the results are compared with conventional state-of-the-art SiGe alloys. Of four preliminary samples studied, a maximum figure-of-merit of 0.88×10-3 C-1 at 900°C was found
Keywords :
Ge-Si alloys; semiconductor materials; thermoelectric conversion; Seebeck coefficient; SiGe thermoelectric materials; X-ray diffraction measurements; electrical resistivity; electronic microscopy; homogeneous fine-grained alloys; mechanical alloying; optical metallography; semiconductor; thermal diffusivity; Alloying; Electron microscopy; Germanium silicon alloys; Grain size; Optical materials; Optical microscopy; Silicon germanium; Temperature; Thermoelectricity; X-ray diffraction;
Conference_Titel :
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location :
Washington, DC
DOI :
10.1109/IECEC.1989.74542
