• DocumentCode
    2557810
  • Title

    A Ka-band high-power protection switch with open/short-stub selectable circuits

  • Author

    Hangai, Masatake ; Nakahara, Kazuhiko ; Yamaguchi, Mamiko ; Hieda, Morishige

  • Author_Institution
    Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Firstpage
    1513
  • Lastpage
    1516
  • Abstract
    A Ka-band high-power protection switch has been developed. Our invented circuit utilized new open/short-stub selectable circuit. By using this configuration, the gate widths of the FETs and the power handling capability at transmitting mode can be independently determined. So the circuit can keep low insertion loss at receiving mode while maintaining high power performance at transmitting mode. To verily this methodology, we have fabricated an MMIC switch, and the circuit has achieved the insertion loss of 2 dB, the isolation of 25 dB, and the power handling capability of 38 dBm at 5% bandwidth of Ka-band.
  • Keywords
    MMIC; field effect transistors; microwave switches; FET; Ka-band high-power protection switch; MMIC switch; open/short-stub selectable circuits; Distributed parameter circuits; FETs; Frequency; Insertion loss; Millimeter wave transistors; Optical switches; Power transmission lines; Protection; Switching circuits; Voltage; FET; MMIC; high-power; switch;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
  • Conference_Location
    Boston, MA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-2803-8
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2009.5165996
  • Filename
    5165996