DocumentCode
2557810
Title
A Ka-band high-power protection switch with open/short-stub selectable circuits
Author
Hangai, Masatake ; Nakahara, Kazuhiko ; Yamaguchi, Mamiko ; Hieda, Morishige
Author_Institution
Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan
fYear
2009
fDate
7-12 June 2009
Firstpage
1513
Lastpage
1516
Abstract
A Ka-band high-power protection switch has been developed. Our invented circuit utilized new open/short-stub selectable circuit. By using this configuration, the gate widths of the FETs and the power handling capability at transmitting mode can be independently determined. So the circuit can keep low insertion loss at receiving mode while maintaining high power performance at transmitting mode. To verily this methodology, we have fabricated an MMIC switch, and the circuit has achieved the insertion loss of 2 dB, the isolation of 25 dB, and the power handling capability of 38 dBm at 5% bandwidth of Ka-band.
Keywords
MMIC; field effect transistors; microwave switches; FET; Ka-band high-power protection switch; MMIC switch; open/short-stub selectable circuits; Distributed parameter circuits; FETs; Frequency; Insertion loss; Millimeter wave transistors; Optical switches; Power transmission lines; Protection; Switching circuits; Voltage; FET; MMIC; high-power; switch;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location
Boston, MA
ISSN
0149-645X
Print_ISBN
978-1-4244-2803-8
Electronic_ISBN
0149-645X
Type
conf
DOI
10.1109/MWSYM.2009.5165996
Filename
5165996
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