DocumentCode
2557865
Title
A n-CuInSe2 based thin-film photovoltaic cell with an electrochemically formed p-type window
Author
Menezes, Shalini
Author_Institution
Interphases Research, Thousand Oaks, CA, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
1162
Abstract
A n-CuInSe2-based thin film cell is described. The cell obviates some of the present concerns with the p-CuInSe2/n-CdS cell, while retaining its advantages. Topics addressed include the mechanism of surface conversion, electron configuration, and device performance
Keywords
copper compounds; indium compounds; semiconductor thin films; solar cells; ternary semiconductors; CuInSe2 solar cells; electron configuration; performance; semiconductor thin films; surface conversion; window; Chemicals; Corrosion; Gold; Heterojunctions; Photoconductivity; Photovoltaic cells; Photovoltaic systems; Solar power generation; Solid state circuits; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169393
Filename
169393
Link To Document