Title :
Cost-Effective Integration of RF-LDMOS Transistors in 0.13 μm CMOS Technology
Author :
Mai, A. ; Rücker, H. ; Sorge, R. ; Schmidt, D. ; Wipf, C.
Author_Institution :
IHP, Frankfurt (Oder)
Abstract :
Abstract - A new cost-effective concept for RF-LDMOS transistors in a standard 0.13 mum CMOS technology without process modifications is demonstrated. For the integration of the devices only standard implants of the RF-CMOS process are used. The devices have gate length of 0.35 mum and share the 7 nm gate oxide of the 3.3 V CMOS I/O devices. A breakdown voltage of 19 V and fT/fMAX values of 25 GHz/55 GHz, respectively are obtained.
Keywords :
CMOS analogue integrated circuits; MOSFET; 0.13 mum CMOS technology; RF-LDMOS transistors; breakdown voltage; gate length; size 0.35 micron; wavelength 0.13 micron; CMOS analog integrated circuits; CMOS process; CMOS technology; Cutoff frequency; Doping profiles; Implants; Integrated circuit technology; MOS devices; MOSFETs; Radio frequency;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-3940-9
Electronic_ISBN :
978-1-4244-2831-1
DOI :
10.1109/SMIC.2009.4770531
