Title :
Recent investigations of SiGe/GaP thermoelectric materials at TTC and GE
Author :
Masters, R.G. ; Nakahara, J.F.
Author_Institution :
Thermo Electron Technol. Corp., Waltham, MA, USA
Abstract :
The chemical, microstructural, and thermoelectric properties of improved and unimproved SiGe/GaP alloys are compared. High-temperature heat treatment of hot pressed SiGe/GaP materials is shown to produce an improved combination of thermoelectric properties. A large reduction in the electrical resistivity with only a slight decrease in the thermal conductivity is observed. A P/Ga ratio near 10 is also observed; however, additional work is required to verify if P/Ga ratio optimization is decisive in improving the material
Keywords :
Ge-Si alloys; gallium alloys; phosphorus alloys; semiconductor materials; thermoelectric conversion; GE; SiGe-GaP alloys; TTC; chemical properties; electrical resistivity; high temperature heat treatment; microstructural properties; ratio optimization; semiconductor; thermal conductivity; thermoelectric materials; Annealing; Composite materials; Germanium silicon alloys; Powders; Scanning electron microscopy; Silicon germanium; Solids; Space technology; Temperature; Thermoelectricity;
Conference_Titel :
Energy Conversion Engineering Conference, 1989. IECEC-89., Proceedings of the 24th Intersociety
Conference_Location :
Washington, DC
DOI :
10.1109/IECEC.1989.74544
