DocumentCode :
2558055
Title :
High-rate deposition of high-quality CdTe films for high-efficiency solar cells
Author :
Bonnet, Dieter ; Henrichs, Beate ; Richter, Hilmar
Author_Institution :
Battelle Inst. eV, Frankfurt am Main, Germany
fYear :
1991
fDate :
7-11 Oct 1991
Firstpage :
1165
Abstract :
CdTe/CdS heterojunction solar cells of 11% efficiency have been produced by close-spaced sublimation of highly oriented large-grain p-CdTe films at a deposition-rate of above 5 μm/min in a nitrogen-ambient at a pressure of 10-1 mbar, using a very thin evaporated n-CdS film. Internal quantum efficiencies are close to 100% over a broad spectral range. A realistic potential of >15% is estimated for this cell
Keywords :
II-VI semiconductors; cadmium compounds; p-n heterojunctions; semiconductor thin films; solar cells; vapour deposition; 11 percent; CdTe-CdS; close-spaced sublimation; heterojunction solar cells; quantum efficiencies; semiconductor thin films; vapour deposition; Absorption; Costs; Doping; Lattices; Optical films; Photovoltaic cells; Radiative recombination; Semiconductor materials; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
Type :
conf
DOI :
10.1109/PVSC.1991.169394
Filename :
169394
Link To Document :
بازگشت