Migration of impurities from semicon shield through PE insulation under various experimental conditions

Author

Belhadfa, A. ; Houdayer, A. ; Hinrichsen, P.F. ; Kajrys, G. ; Crine, J.-P. ; Noirhomme, B.

Author_Institution

Lab. de Phys. Nucl., Montreal Univ., Que., Canada

fYear

1990

fDate

3-6 Jun 1990

Firstpage

321

Lastpage

325

Abstract

Micro-PIXE (proton-induced X-ray emission) has been used to measure the depth profiles of impurities migrating from heavily contaminated semiconducting shield into extra-clean HMW-polyethylene. Measurements were made as a function of time, temperature, and the environment, as well as on samples subjected to an AC field of about 5 kV/mm. The impurity migration varied with time and was found to depend on the presence of water. The AC field was found to affect the migration of some impurities but not that of others

Keywords

X-ray chemical analysis; cable insulation; insulation testing; ion microprobe analysis; materials testing; organic insulating materials; polymers; power cables; AC field; depth profiles of impurities; environment; extra-clean HMW-polyethylene; function of time; heavily contaminated semiconducting shield; impurity migration; micro-PIXE; polyethylene insulation; presence of water; proton-induced X-ray emission; temperature; Cable insulation; Impurities; Mechanical factors; Pollution measurement; Polyethylene; Protons; Temperature; Time measurement; Trees - insulation; Underwater cables;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Insulation, 1990., Conference Record of the 1990 IEEE International Symposium on

Conference_Location

Toronto, Ont.

ISSN

1089-084X

Type

conf

DOI

10.1109/ELINSL.1990.109764

Filename

109764