A High-Linearity, X-Band, SiGe Low-Noise Amplifier for Improved Dynamic Range in Next-Generation Radar and Wireless Systems

Author

Thrivikraman, Tushar K. ; Grens, Curtis M. ; Kuo, Wei-Min Lance ; Andrews, Joel M. ; Cressler, John D.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2009

fDate

19-21 Jan. 2009

Firstpage

1

Lastpage

4

Abstract

We present a high-dynamic range (HDR) X-band LNA implemented in silicon-germanium (SiGe) technology targeting high-performance radar and wireless communications applications. To our knowledge, this is the first Si-based LNA to achieve over 30 dB gain, 30 dBm of OTOI, and 2 dB noise figure at X-band. System-level performance simulations clearly show the benefits of using HDR LNAs in the receive chain. The performance of this SiGe HDR LNA compares very favorably with other state-of-the-art LNAs, highlighting the capabilities of SiGe technology for these types of applications.

Keywords

Ge-Si alloys; low noise amplifiers; semiconductor materials; SiGe; SiGe HDR LNA; SiGe low-noise amplifier; X-band; high-performance radar; wireless communications; Dynamic range; Gain; Germanium silicon alloys; Linearity; Low-noise amplifiers; Noise figure; Power generation; Radar; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems, 2009. SiRF '09. IEEE Topical Meeting on

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-3940-9

Electronic_ISBN

978-1-4244-2831-1

Type

conf

DOI

10.1109/SMIC.2009.4770539

Filename

4770539