Simulation of intermodulation distortion in passive CMOS FET mixers

Author

Khatri, Himanshu ; Gudem, Prasad S. ; Larson, Lawrence E.

Author_Institution

Univ. of California San Diego, La Jolla, CA, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

1593

Lastpage

1596

Abstract

The simulation of third-order intermodulation distortion in a passive CMOS FET mixer will typically predict a fictitious 2:1 slope using the industry standard EKV, BSIM3 and BSIM4 models. This phenomenon has been attributed to the discontinuity in the second-order derivatives of the drain-current and the terminal charge model. This paper establishes the connection between the discontinuous derivatives and the resulting intermodulation distortion slope and provides experimental verification.

Keywords

CMOS integrated circuits; MOSFET; intermodulation distortion; mixers (circuits); passive networks; semiconductor device models; BSIM3 model; BSIM4 model; EKV model; discontinuous derivatives; drain-current model; intermodulation distortion; passive CMOS FET mixer; semiconductor device modelling; terminal charge model; 1f noise; Energy consumption; FETs; Intermodulation distortion; MOSFETs; Nonlinear distortion; Polynomials; Predictive models; Semiconductor device modeling; Voltage; BSIM; EKV; Gummel symmetry; PSP; Passive mixer; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5166016

Filename

5166016